Abstract
High conducting γ-phase can be stabilized at room temperature by substitution of various metal cations in bismuth vanadate known as Bi 4V 2− x Me x O 11− δ (Me = metal cation). In the present work, Ti 2O 3-doped Bi 4V 2− x Ti x O 11− δ (0 ≤ x ≤ 0.4) samples were prepared by ceramic processing route and sintered over a range of temperature (750–825 °C) in the interval of 25 °C to study the influence of grain size and porosity on the ionic conductivity. A relation between microstructure, crystal structure and conductivity has been established using scanning electron microscopy, X-ray powder diffraction (XRD), a.c. impedance spectroscopy and differential scanning calorimetry (DSC). The study indicates that apart from phase stabilization, microstructure plays an important role to achieve high ionic conductivity.
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