Abstract
The thermal stability and interfacial characteristics for hafnium oxynitride (HfO x N y ) gate dielectrics formed on Si (1 0 0) by plasma oxidation of sputtered HfN films have been investigated. X-ray diffraction results show that the crystallization temperature of nitrogen-incorporated HfO 2 films increases compared to HfO 2 films. Analyses by X-ray photoelectron spectroscopy confirm the nitrogen incorporation in the as-deposited sample and nitrogen substitution by oxygen in the annealed species. Results of FTIR characterization indicate that the growth of the interfacial SiO 2 layer is suppressed in HfO x N y films compared to HfO 2 films annealed in N 2 ambient. The growth mechanism of the interfacial layer is discussed in detail.
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