Abstract
We discuss the fabrication of nanopillar spin electronic devices from metal multilayeredheterostructures, utilizing a novel three-dimensional focused ion beam lithographyprocess. Finite element simulation was performed to optimize the geometry ofthe nanopillar device and to demonstrate that current flow is perpendicular tothe plane within the active region of the device. Clear zero-field current inducedmagnetization switching is observed in our nanopillar devices at room temperature.
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