Abstract

Yttrium fluoride (YF3) films were grown on sapphire substrate by a radio frequency magnetron using a commercial ceramic target in a vacuum chamber. The structure, composition, and plasma etching behavior of the films were systematically investigated. The YF3 film was deposited at a working pressure of 5 mTorr and an RF power of 150 W. The substrate-heating temperature was increased from 400 to 700 °C in increments of 100 °C. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction results confirmed an orthorhombic YF3 structure was obtained at a substrate temperature of 700 °C for 2 h. X-ray photoelectron spectroscopy revealed a strongly fluorinated bond (Y–F bond) on the etched surface of the YF3 films. HRTEM analysis also revealed that the YF3 films became yttrium-oxyfluorinated after exposure to fluorocarbon plasma. The etching depth was three times lower on YF3 film than on Al2O3 plate. These results showed that the YF3 films have excellent erosion resistance properties compared to Al2O3 plates.

Highlights

  • Silicon-oxide series of ceramics, such as SiO2 and Al2O3 coatings, are valued for their hardness, high wear resistance, dielectric strength, high corrosion resistance, and chemical stability

  • Yttrium fluoride (YF3) coatings have recently attracted substantial attention because their high plasma erosion resistance prevents the generation of fluoride particles on the chamber wall surface, reducing particulate contamination [8]

  • YF3 thin films were deposited on c-plane sapphire substrate at room temperature by radio frequency magnetron sputtering in a vacuum chamber

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Summary

Introduction

Silicon-oxide series of ceramics, such as SiO2 and Al2O3 coatings, are valued for their hardness, high wear resistance, dielectric strength, high corrosion resistance, and chemical stability. They have been extensively used as plasma-resistant materials in plasma etching equipment and in the deposition thin-film processing semiconductor industry [1,2]. On the inner walls of the processing chamber, these oxide materials interact with fluorine-based plasma, causing significant erosion and particle generation [4].

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