Abstract
GaN is deposited on the surface of single wall carbon nanotubes (SWCNTs) by molecular beam epitaxy using a single source molecular precursor at low temperatures. Porous SWCNTs are synthesized on substrates by modified arc discharge method. These porous template samples are used for growing GaN. The crystal quality and microstructure of the GaN–CNT composites are analyzed using grazing incident XRD, SEM equipped with energy-dispersive X-ray spectroscopy (EDS), Raman spectroscopy, and transmission electron microscopy. The field emission properties of the as-synthesized products are investigated. A turn-on field of and a high current density of at a field of are observed. The results could be related to the micro- and shell-core structures of GaN/CNT nanocomposites.
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