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Abstract
La modified SBT (Sr 0.8La 0.1Bi 2.1Ta 2O 9) thin films of different thickness were fabricated on Pt/Ti/SiO 2/Si substrates by the metalorganic decomposition technique. All the films were annealed layer-by-layer at 800 °C using a rapid thermal annealing furnace. X-ray diffraction analysis indicated that the relative intensity of the (2 0 0) diffraction peak [ I(2 0 0)/ I(1 1 5)] increased with the increase of the film thickness. Eventually, an a-axis preferentially oriented SLBT film was obtained. These results are discussed with respect to the anisotropy of the grain growth. The a-axis preferentially oriented SLBT film, whose relative intensity of the (2 0 0) peak [ I(2 0 0)/ I(1 1 5)] was 1.05, had a remanent polarization (2 P r) value of 21 μC/cm 2 and a coercive field (2 E c) value of 70 kV/cm under the electric field of 200 kV/cm.
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