Abstract
Yttrium-substituted Bi4 - xYxTi3O12 (x = 0.00, 0.10, 0.30, 0.50, 0.75, 1.00) polycrystalline thin films were synthesized by metal-organic decomposition (MOD) method. Ferroelectric measurements revealed that the Bi4Ti3O12 films substituted by Y with appropriate ratios could have higher remnant polarization (Pr) and significantly improved fatigue behavior compared with BTO. The remnant polarization of the Bi3.50Y0.50Ti3O12 capacitor reached 10 μC/cm2 at an applied field about 120 kV/cm with nearly fatigue free property up to 1010cycles. XRD patterns show a little impurity phases as well as Aurivillius phase in the crystallization process with different annealing temperature. Perhaps it induced the poor leakage current properties.
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