Abstract
Within this work, we studied InGaN QWs with nominally 17% InN mole fraction grown within an 80 × 80 μm area with local misorientation angle change from 0.3° to 3.2°. We observed a significant improvement of the photoluminescence intensity for the area with misorientation above 1.5°, which we attribute to the quenching of nonradiative recombination processes. From the structural point of view, the increase of the misorientation angle above 1.5° is accompanied by the improvement of the morphology of the sample and quality of the quantum wells observed through atomic force microscopy and transmission electron microscopy. We show that the structural and emission qualities in high-InN- mole fraction layers can be improved just by increasing the misorientation angle of the substrate and that the improved qualities are preserved even for large misorientation angles.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
