Abstract
A complex structural and electrophysical analysis of MHEMT In0.70Al0.30As/In0.75Ga0.25As nanoheterostructures grown on (100)GaAs substrates using two radically new designs of metamorphic buffer (providing different internal-strain distributions) has been performed. The lattice parameters of the constant-composition layers entering the metamorphic buffer have been determined by X-ray diffraction using symmetric and asymmetric (400) and (422) reflections. It is shown that, having chosen a proper design of metamorphic buffer in nanoheterostructures on GaAs substrates, it is possible to obtain electron mobility and concentration comparable with those for nanoheterostructures on InP substrates. The compositions of smoothing layers, determined from the peaks on rocking curves, are found agree well with the process values.
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