Abstract
Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm2/V·s achieved at room temperature, and values reaching 155 cm2/V·s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum ION/IOFF > 250 achieved at −50 °C and ION/IOFF = 90 at room temperature. Factors limiting the ION/IOFF ratio are investigated and recommendations are made for future implementation of this material.
Highlights
Received: 11 January 2021Low-temperature-grown (
We have shown the ability of low-temperature-grown (
The room-temperature Hall electron mobility of 155 cm2 /V·s achieved for a heterostructure consisting of 25 nm poly GaAs + 25 nm poly InAs grown on glass (Table 1) exceeds the reported Hall mobility values of a number of other low-temperaturegrown thin-film materials, such as polycrystalline silicon [23], Hf-doped In2 O3 [24], ITO [25], and ZnO [26,27]
Summary
Low-temperature-grown (
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
