Abstract
δ-doping in SrTiO3 plays a pivotal role for oxide electronics. By first-principles density functional calculations, we reveal that the electronic and structural properties of LaO δ-doped SrTiO3 can be drastically altered by compressive biaxial inplane strains. We predict the existence of a critical inplane strain (ηc) above which many interesting phenomena occur, including (i) a profound symmetry breaking to the doping-induced electron states, (ii) a dramatic decline of the electron potential over a short distance of 2.5 Å near the doping layer, (iii) a new structure pattern of cation-anion displacements, and (iv) the emergence of unusual downward dispersions in the conduction bands with negative effective masses for electrons. The microscopic insight for these interesting phenomena is provided. Our study demonstrates that biaxial inplane strain can effectively modify the electronic properties in δ-doped SrTiO3 for the purpose of oxide electronics.
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