Abstract
Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112̄0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.
Highlights
In recent years, group III- nitride semiconductors such as GaN, Indium nitride (InN), and AlN are in the focus of attention for their applications in optoelectronics as well as high frequency and high power electronics
It has been found that multi-nucleation, in which each site acts as the origin of several nanowires, is the key to achieve long and narrow InN nanowires
These results suggest that InN nanowires are grown along the [112 ̄0] direction (a-plane)
Summary
Group III- nitride semiconductors such as GaN, InN, and AlN are in the focus of attention for their applications in optoelectronics as well as high frequency and high power electronics. Structural and electronic properties of InN nanowire network grown by vapor-liquidsolid method
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