Structural and electronic properties of amorphous InSb from first principles study

Abstract

The model for amorphous semiconductor InSb (a-InSb) was constructed through the first principles calculations, based on the idea of “continuous random networks” (CRN). The results of structural parameters for a-InSb are in agreement with the available data both theoretically and experimentally. The structure of a-InSb is almost tetrahedrally bonded with a perfect average coordination number of four. Due to the influence of the disorders, the density of states for a-InSb has the smearing structure in contrast to crystalline InSb (c-InSb). As a consequence of the induction of disorders, modification phenomena occur at the band edge of a-InSb in contrast to that of c-InSb.