Structural and electronic properties of Al12X+ (X=C, Si, Ge, Sn, and Pb) clusters

Abstract

Using the first-principles method with the generalized gradient approximation, the authors have studied the structural and electronic properties of Al(12)X(+) (X=C, Si, Ge, Sn, and Pb) clusters in detail. The ground state of Al(12)C(+) is a low symmetry C(s) structure instead of an icosahedron. However, the Si, Ge, Sn, and Pb atom doped cationic clusters favor icosahedral structures. The ground states for Al(12)Si(+) and Al(12)Ge(+) are icosahedra, while the C(5nu) structures optimized from an icosahedron with a vertex capped by a tetravalent atom have the highest binding energy for Al(12)Sn(+) and Al(12)Pb(+) clusters. The I(h) structure and the C(5nu) structure are almost degenerate for Al(12)Ge(+), whose binding energy difference is only 0.03 eV. The electronic properties are altered much by removing an electron from the neutral cluster. The binding strength of a valence electron is enhanced, while the binding energy of the cluster is reduced much. Due to the open electronic shell, the band gaps between the highest occupied molecular orbital and the lowest unoccupied molecular orbital are approximately 0.3 eV for the studied cationic clusters.