Abstract
This paper presents the results of an in-depth investigation into the chemical vapour deposition (CVD) growth of β-SiC on Si from H 3SiCH 3 precursors. In agreement with previous work, we find an onset of CVD growth at substrate temperatures in the order of 750–800 °C. Higher temperatures lead to exponentially increasing growth rates until diffusion limitations set in at about 1000 °C. The highest quality films, with structural characteristics typical of single-crystal material, were deposited at about 1050°C. Substrate pretreatments, except for a pre-deposition HF dip, had surprisingly little influence on the crystal quality. Films deposited at substrate temperatures lower than 1000°C exhibited substantially broader IR absorption peaks and a higher degree of misorientation than those deposited at high temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
