Abstract
Nitrogenated nanocrystalline diamond films were grown from hot filament reactor in CH4-Ar-H2-N2 gas mixtures. They were characterized using scanning electronic microscopy and Raman spectroscopy. Significant changes on the film surface morphologies and Raman spectra were observed due to N2 addition. Their electrochemical properties were studied by cyclic voltammetry. The electrodes behavior showed to be controlled by the degree on nitrogenation. With the increase of the nitrogen content in the reaction gas mixture (from 2 to 20 vol.%), the reversibility of reactions in the Fe(CN)63-/4- redox system in the films increased. In respect of the electrodes grown in experimental conditions described in this work, they have the properties very close to those grown in microwave plasma reactor.
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