Abstract
A new approach for the synthesis of nanopowders and thin films of CuInGaSe2 (CIGS) chalcopyrite material doped with different amounts of Cr is presented. The chalcopyrite material CuInxGa1 − xSe2 was doped using Cr to form a new doped chalcopyrite with the structure CuInxCryGa1 − x − ySe2, where x = 0.4 and y = 0.0, 0.1, 0.2, or 0.3. The electrical properties of CuInx CryGa1 − x − ySe2 are highly dependent on the Cr content and results show these materials as promising dopants for the fabrication thin film solar cells. The CIGS nano-precursor powder was initially synthesized via an autoclave method, and then converted into thin films over transparent substrates. Both crystalline precursor powders and thin films deposited onto ITO substrates following a spin-coating process were subsequently characterized using XRD, SEM, HR-TEM, UV–visible and electrochemical impedance spectroscopy (EIS). EIS measurement was performed to evaluate the dc-conductivity of these novel materials as conductive films to be applied in solar cells.
Highlights
In the past decade, the photovoltaics (PV) technology has strongly evolved and even reached grid parity with other conventional energy sources [1]
Significant advances have been reported after long time of investigation in the field of thin film solar cells technology [2,3]
Silicon has been the dominant material in the market of PV technology, others thin films options such as cadmium telluride (CdTe), copper indium gallium disulfide (CIGS2), and copper indium gallium diselenide (Cu(In,Ga)Se2, CIGS) materials, which are capable of maintaining constant their efficiency for more than
Summary
The photovoltaics (PV) technology has strongly evolved and even reached grid parity with other conventional energy sources [1] In this regard, significant advances have been reported after long time of investigation in the field of thin film solar cells technology [2,3]. The first group is made of monocrystalline silicon or polycrystalline silicon materials, whereas thin film photovoltaic cells are based on solution processable semiconductors Materials such as CIGS and other materials from the same family have emerged as promising candidates to be used in thin-film solar cells due to their high absorption coefficient, changeable bandgap, and resistance to photodegradation [18,19,20,21]. The analysis of results allowed us to quantify which is the doping percentage of Cr in the CuIn0.4 Ga0.6 Se2 structure
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