Abstract
We report metal–organic vapor-phase epitaxy (MOVPE) growth of pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes (RTDs) on InP substrates for the first time. X-ray diffraction (XRD) measurements and transmission electron microscopy (TEM) observations reveal that a uniform strained InAs subwell is coherently grown in the double-barrier (DB) structure. The AlAs/InGaAs/InAs RTDs exhibit excellent current–voltage characteristics with a high peak current density (JP) of around 2 × 105 A/cm2 and peak-to-valley ratio (PVR) of around 6. A comparison with control RTDs consisting of AlAs/In0.8Ga0.2As DB confirms the effectiveness of InAs subwell insertion for the improvement of PVR.
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