Abstract

In this paper, structural and electrical transport properties of hexagonal, 4H-type, BaRu 1− x Mn x O 3 ( x = 0 − 0.3 ) , synthesized by the solid-state reaction method at ambient pressure, have been presented. Electrical transport properties are measured over a temperature range of 10–300 K in the magnetic field up to 15 kOe. The low temperature resistivity ( 10 K < T < 50 K ) shows a quadratic temperature dependence ρ ( T ) = ρ 0 + AT 2 for the x=0 sample and a crossover from a T 2 to a T 1.5 temperature dependence, corresponding to the Fermi-liquid phase to a non-Fermi-liquid phase crossover, in the x=0.03 sample. Furthermore, Mn doping drives the system from the metallic state at x=0 to the insulating state x ≥ 0.1 , in which the x=0.3 sample shows a variable range hopping behavior below 100 K. At low temperature region, large magnetoresistance was observed for the samples with x=0.2 and 0.3.

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