Abstract
Cd1−xZnxTe (where x = 0.02, 0.04, 0.06, 0.08) thin film have been deposited on glass substrate at room temperature by thermal evaporation technique in a vacuum at 2×10 −5 torr. The structural analysis of the films have been investigated using X‐ray diffraction technique. In low temperature range the thermal activation energy corresponding to the grain boundary‐ limited conduction is found to be in the range of 38 μeV to 48 μeV, but in the high temperature range the activation energy varies between 0.86 meV to 1.01 meV.
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