Abstract
c-axisepitaxial and polycrystalline Sr3Bi4Ti6O21 (SBTi) thin films were fabricated on(001)SrTiO3 (STO) single-crystal substrates and Pt/Ti2/SiO2/Si substratesrespectively, by pulsed laser deposition (PLD). Structures of the films weresystematically characterized by x-ray diffraction (XRD), including θ–2θ-scans, rocking curvescans and ϕ-scans,atomic force microscopy and transmission electron microscopy (TEM).The epitaxial orientation relation of the SBTi films on STO isestablished by selected-area electron diffraction and XRD ϕ-scans to be (001)SBTi∥(001)STO, [11̄0]SBTi ∥[010]STO. Cross-sectional high-resolution TEM studies on the epitaxialSBTi film revealed that SBTi is a single-phase material. A special kindof irrational atomic shift along the [001] direction was observed and isdiscussed in detail. By using an evanescent microwave probe (EMP),the room-temperature dielectric constant of the epitaxial SBTi film wasmeasured to be 211 ± 20. Excellent electrical properties of the polycrystallineSBTi films with Pt bottom and top electrodes were exhibited: thePr andEc values were 4.1 μC cm−2and 75 kV cm−1 respectively, the nonvolatile polarizations decreased by less than5% after 2.22 × 109 switching cycles and the dielectric constant and loss tangentwere 363 and 0.04 at 100 kHz.
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