Abstract
Structural and electrical properties of off-axis DC magnetron sputtered Al2O3-doped ZnO (AZO) films were systematically investigated as a function of deposition distance from the center. With increasing distance, the AZO films showed an enhanced crystallinity and a denser microstructure with a smooth surface. The AZO film sputtered at the edge of the deposition stage (∼6cm away from the center) showed the highest mobility (∼10.1cm2/Vs) and the lowest resistivity (∼2×10−3Ωcm) due to the high plasma and thermal power density, which was suitable for transparent conducting oxide applications.
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