Abstract
Sulfosalts SnxSbySz materials were known as promising candidates in photovoltaic applications. So, a member of this family Sn2Sb6S11 material was synthesized by direct melting of the constituent elements and Sn2Sb6S11 thin films were deposited by single source vacuum thermal evaporation method at different substrates temperatures in the range 30–200 °C. A good homogeneity of the films with thicknesses in the range 216–471 nm was obtained. X-ray diffraction. Atomic force microscopy and AC impedance spectroscopy were used to characterize the structural, morphological and electrical properties respectively. The effect of these properties as a function of the substrate temperature has been studied. Frequency measurements, in the range from 5 Hz to 13 MHz, were performed in order to evaluate the effect of the substrate temperature on the conduction mechanism. Impedance spectroscopy appears as a very useful technique for discerning between grain boundary capacitance (C gb) and grain boundary resistance (R gb) contributions.
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