Abstract
Abstract Cr, Au and Ni Schottky barriers were formed on n-GaN. Fundamental parameters of the barriers (barrier height, electron affinity of GaN, and effective Richardson coefficient) were calculated from results of current-voltage and capacitance-voltage measurements. Interface chemistry of Cr, Au and Ni barriers on n-GaN was studied using Auger electron spectroscopy (AES) and angle-resolved X-ray photoelectron spectroscopy (AR XPS). A correlation between the chemical reactivity of metals and the value of the effective Richardson coefficient was established.
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