Abstract
In present article, we demonstrated for the first time the synthesis and properties of SbXW1−xSe2 (0, 0.5) ternary alloys. The crystals of SbXW1−xSe2 (0, 0.5) ternary alloys were grown by direct vapour transport technique. The XRD results confirm the 2H-hexagonal lattice structure with P63/mmc space group and grown crystals are highly crystallographic c-axis oriented. The screw dislocation mechanism is predominating in the growth process of Sb0.5W0.5Se2 crystals. The results of electrical characterization show n-type semiconducting nature. The Raman spectra exhibit peaks corresponding to out of plane A1g, in-plane E2g and 2LA modes of vibration which is attributing the 2H-polymorph of grown SbXW1−xSe2 (0, 0.5) ternary alloys. The results shows substitution of Sb (+5) on W (+4) lattice site due to similar ionic size. The band gap tailoring from 0.93 to 1.40 eV is achieved, suggesting the effective way to tune the material characteristics for high performance devices.
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