Abstract
The as-deposited and annealed radio frequency reactive magnetron sputtered tantalum oxide (Ta 2O 5) films were characterized by studying the chemical binding configuration, structural and electrical properties. X-ray photoelectron spectroscopy and X-ray diffraction analysis of the films elucidate that the film annealed at 673 K was stoichiometric with orthorhombic β-phase Ta 2O 5. The dielectric constant values of the tantalum oxide capacitors with the sandwich structure of Al/Ta 2O 5/Si were in the range from 14 to 26 depending on the post-deposition annealing temperature. The leakage current density was <20 nA cm −2 at the gate bias voltage of 0.04 MV/cm for the annealed films. The electrical conduction mechanism observed in the films was Poole–Frenkel.
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