Abstract
Plasma-deposited silicon nitride films were produced from SiH4-N2 gas mixture. Their composition, chemical bonds, and electrical properties were investigated by varying the deposition conditions. The silicon nitride films from SiH4-N2 gas mixture exhibit (i) less hydrogen, (ii) higher thermal endurance, (iii) higher density, and (iv) smaller etching rate than those of the films deposited from SiH4, and NH3 gas mixture. These results can be partly attributed to lower hydrogen concentration. As the Si/N ratio approaches the stoichiometric value, 0.75, the resistivity and the breakdown strength are increased. They are 1015Ωcm and 9MV/cm, respectively, at Si/N≃0.85. Interface state density between silicon and silicon nitride layers is as low as 1& #x223C; 5xl011cm−2 eV−1.
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