Structural and electrical properties of Pb(Zr 0.53Ti 0.47)O 3 films prepared on La 0.5Sr 0.5CoO 3 coated Si substrates

Abstract

PbZr 0.53Ti 0.47O 3 (PZT) thin films with thickness of 0.9 μm were prepared on La 0.5Sr 0.5CoO 3 (LSCO) coated Si substrates. Both PZT and LSCO were prepared by the sol–gel method. The concentration of LSCO sol was varied from 0.3 to 0.1 mol/L, which could modify the preferential orientation of PZT thin films and consequently affect the dielectric and ferroelectric properties. The LSCO electrode layers derived from lower sol concentration of 0.1 mol/L have much more densified structure, which facilitates the formation of (1 0 0) textured PZT films with smooth and compact columnar grains. PZT thin films prepared on the optimized LSCO films exhibit the enhanced dielectric constant and remnant polarization of 980 and 20 μC/cm 2, respectively.