Abstract
PACS34.50.Dy; 61.10.-i; 68.35.DvElectronic supplementary materialThe online version of this article (doi:10.1186/1556-276X-9-693) contains supplementary material, which is available to authorized users.
Highlights
Low-energy (1 to 20 keV) ion implantation of various impurities into Si is commonly used to make super-shallow p-n junctions [1,2] and to form a variety of quantum-sized objects [3,4]
The dotted lines at 1 × 1017 and 2 × 1018 cm−3 oxygen concentrations encompass a region of optimum conditions for thermal donor (TD) center generation
Our work compares the mechanisms of thermal donor (TD) center formation in silicon grown using the float zone (FZ-Si) and Czochralski (Cz-Si) methods as a result of ion implantation of carbon
Summary
Low-energy (1 to 20 keV) ion implantation of various impurities into Si is commonly used to make super-shallow p-n junctions [1,2] and to form a variety of quantum-sized objects [3,4]. Implantation of dopants such as B, P, As, and Sb into Si is usually made through a thin (3 to 5 nm) silicon oxide protective (screen) layer. Interaction of accelerated ions with oxygen atoms inside the screen oxide layer leads to generation of recoil oxygen atoms The latter penetrate into Si substrate and stimulate the quasichemical reactions of matrix atoms and point defects in the Si surface layer. A significant number of carbon atoms are incorporated into a silicon matrix, because the absorption of
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