Abstract
High pressure X-ray diffraction and electrical resistivity measurements were carried out at room temperature on some NiAs-type compounds; CrSb, NiTe, TiS and the high-pressure phase of AlAs. The axial ratio of each compound was found to deviate with pressure from the ideal value for the hexagonal close-packed geometry. Structural phase transition was observed in CrSb at 17 GPa, whereas the NiAs-type structure persisted in AlAs (between 14 and at least 39 GPa), TiS (to at least 41 GPa) and NiTe (to at least 69 GPa). The electrical resistivity of CrSb showed simply a slight pressure-induced decrease without exhibiting any discontinuity in the vicinity of the pressure of phase transition. In TiS, drops in the resistivity were observed at 25 and 27 GPa. General trends in the pressure dependence of the axial ratio as well as in the bulk modulus are discussed.
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