Abstract
A Ge/Si heterostructure with an ultra-thin transition layer was fabricated at low temperature by direct bonding. In-situ oxygen or nitrogen radical activation was performed after hydrophilic cleaning on both Germanium and Silicon surfaces. The interfacial structure was analyzed by Scanning Acoustic Microscopy (SAM) and High-Resolution Transmission Electron Microscopy (HR-TEM). The samples were diced into mesa structures and electrical properties at different locations were measured in order to characterize the quality of the bonded heterostructure.
Published Version
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