Abstract
High purity tantalum foils were implanted with 20 keV molecular nitrogen ions at dose levels varying from 5 × 1016 to 1 × 1018 N2 + cm−2. The Fourier Transform Infrared (FTIR) spectra of the implanted layers show the formation of tantalum nitrides of different structures depending on the total ion dose. The X-Ray Diffraction (XRD) studies show the formation of Ta2N and TaN0.8 at all doses and TaN at higher doses (5 × 1017 to 1 × 1018 N+ 2 cm−2). The FTIR, XRD and electrical studies show sputter limited maximum nitride concentrations.
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