Abstract
Abstract Granular metal films (50–200,000 A thick) were prepared by co-sputtering metals (Ni, Pt, Au) and insulators (SiO2, Al2O3), where the volume fraction of metal, x, was varied from x = 1 to x = 0.05. The materials were characterized by electron micrography, electron and X-ray diffraction, and measurements of composition, density and electrical resistivity at electric fields e up to 106 V/cm and temperatures T in the range of 1.3 to 291 K. In the metallic regime (isolated insulator particles in a metal continuum) and in the transition regime (metal and insulator particles in a metal continuum) and in the transition regime (metal and insulator labyrinth structure) the conduction is due to percolation with a percolation threshold at x⋍0.5. Tunnelling measurements on superconductor-insulator-granular metal junctions reveals that the transition from the metallic regime to the dielectric regime (10–50 A size isolated metal particles in an insulator continuum) is associated with the breaking up of a metal ...
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