Abstract
Cubic boron nitride thin films were deposited on a (100)GaAs substrate by hot filament assisted electron beam deposition. The films were grown at a substrate temperature of 400 °C and a boron evaporation rate of 0.2 A s−1. The structural and electrical characteristics of deposited cubic boron nitride thin films were studied. Infrared transmittance spectra and x-ray diffraction studies have shown that a highly cubic phase of the deposited films was obtained. The electrical characteristics of the metal–insulator semiconductor (MIS) structure were measured by using a capacitance–voltage measurement technique. The results suggest that the films can form a stable MIS diode structure.
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