Structural and Electrical Properties of (Cu, Co) Co-Doped ZnO Thin Film

Abstract

Successful synthesis of Cu, Co co-doped ZnO film is obtained by sol-gel method. The structural and electrical properties of the sample were investigated. X-ray diffraction spectroscopy analyses indicate that the Co and Cu co-doping can not disturb the structure of ZnO. No additional peaks are observed in the Zn0.99Co0.01CuxO and Cu+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. By Hall-effect measurement p-type conductivity was observed for the Cu co-doped film. XPS result confirmed Cu ions are univalent in the films.