Abstract
We report structural and electrical properties of catalyst-free Si-doped InAs nanowires (NWs) formed on Si(111) substrates. The average diameter of Si-doped InAs NWs was almost similar to that of undoped NWs with a slight increase in height. In the previous works, the shape and size of InAs NWs formed on metallic catalysts or patterned structures were significantly changed by introducing dopants. Even though the external shape and size of the Si-doped NWs in this work were not changed, crystal structures inside the NWs were significantly changed. For the undoped InAs NWs, both zincblende (ZB) and wurzite (WZ) structures were observed in transmission-electron microscope images, where the portion of WZ structure was estimated to be more than 30%. However, only ZB was observed with an increase in stacking fault (SF) for the Si-doped NWs. The undoped and Si-doped InAs NWs were used as channels of four-point electrical measurements with Al/Ni electrodes to investigate electrical properties. The resistivity calculated from the current-voltage curve of a Si-doped InAs NW showed 1.32 × 10−3 Ωcm, which was dramatically decreased from 10.14 × 10−3 Ωcm for the undoped InAs NW. A relatively low resistivity of catalyst-free Si-doped InAs NWs was achieved without significant change in structural dimensions.
Highlights
We report structural and electrical properties of catalyst-free Si-doped InAs nanowires (NWs) formed on Si(111) substrates
Most of the previous reports on doping for InAs NWs showed a significant change in size and shape[15,16,17,18,19]
We report the effects of Si-doping on the structural and electrical properties of catalyst-free InAs NWs formed on Si(111)
Summary
Of 50, 100, 200, 300, and 400, respectively. The average diameters of InAs NWs were 280, 210, 150, 85, and 80 nm for the UN50, UN100, UN200, UN300, and UN400 samples, respectively. In the previous report, when Si was doped into catalyst-free InAs NWs, the average diameter was significantly increased from 60 to 80 nm with the reduction in height compared to that of the undoped NWs18, because higher Si flux induced a larger nucleus and slower axial growth. In FE-SEM images of Fig. 4, the shapes and sizes of Si-doped InAs NWs were not significantly changed, which is quite different from the previous results that the structural dimension of doped NWs were changed. A relatively low resistivity of Si-doped InAs NWs in this work was achieved without significant change in structural dimensions This is the first observation on the improvement in electrical properties of catalyst-free InAs NWs
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