Abstract
Bi 1.5 Mg 1.0 Nb 1.5 O 7 thin films were deposited at various temperatures by rf-magnetron sputtering on Pt/TiO2/SiO2/Si substrates. The structural and electrical properties were investigated as a function of deposition temperature. The films deposited below 400 °C show an amorphous state and a dielectric constant of approximately 31–51. On the other hand, films deposited at 500 °C exhibit well-developed crystallinity and a high dielectric constant of approximately 104. However, for crystallized films deposited at 500 °C, the leakage current density is higher than that of the films deposited below 300 °C.
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