Structural and Electrical Characterization of Si-Modfet Structures Grown at High Rates by Lepecvd

Abstract

AbstractStrain relaxed graded SiGe buffer layers have been grown by low energy plasma enhanced chemical vapour deposition (LEPECVD). Due to the low ion energies involved in LEPECVD, exceptionally high plasma intensities can be applied without any ion damage of the epitaxial layers. Transmission electron microscopy and X-ray reciprocal space mapping show that relaxed buffer layers grown at rates exceeding 5 nm/s are of a comparable quality to buffer layers grown by standard techniques at much lower rates. Low temperature electric transport measurements on remotely doped tensilely strained Si quantum wells synthesized by LEPECVD show that also good electrical quality is achieved.