Abstract
The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. X- ray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600oC. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fab- ricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN with- out presence of elemental gallium and Ga2O3 in this film.
Highlights
GaN (Gallium Nitride) have attracted interest due to their wide and direct band gap and their potential application to blue-ultraviolet light emitting devices, short-wavelength optoelectronic devices and high-power electrical devices [1]
The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique
The fabricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS)
Summary
GaN (Gallium Nitride) have attracted interest due to their wide and direct band gap and their potential application to blue-ultraviolet light emitting devices, short-wavelength optoelectronic devices and high-power electrical devices [1]. Silicon is increasingly being used as a substrate for GaN growth [2,3] GaN deposited on silicon (Si) substrates has great advantages including excellent wafer quality, less hardness and more design flexibility with current silicon electronic circuit system [4,5,6]. The Si substrate for GaN growth has some advantages over other substrates It can be obtained at low cost and the well developed Si growth technology ensures high quality p- and n-type Si wafers. Thin AlN films have been used as buffer layers for GaN growth on Si substrate [7,8]. Little effort has been made to study the initial growth of GaN under different growth conditions
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