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Abstract
The pulsed laser ablation technique has been employed to fabricate bilayer thin films con-sisting of layered structure ferroelectric bismuth vanadate (Bi2VO5.5) and bismuth titanate (Bi4Ti3O12) on platinized silicon substrate. The phase formation of these films was confirmed by X-ray diffraction (XRD) studies and the crystallites in these bilayers were randomly oriented as indicated by diffraction pattern consisting of the peaks corresponding to both the materials. The homogeneous distribution of grains (~300 nm) in these films was confirmed by atomic force microscopy. The cross-sectional scanning electron microscopy indicated the thickness of these films to be around 350 nm. The film exhi-bited P-E hysteresis loops with Pr ~ 11 ?C/cm2 and Ec ~ 115 kV/cm at room temperature. The dielectric constant of the bilayer was ~ 225 at 100 kHz which was higher than that of homogeneous Bi2VO5.5 film.
Highlights
Fabrication and stabilization of materials that do not occur naturally has been the subject of great interest of current materials research [1]
The surface morphology of the BVBT BL thin film was investigated by contact mode atomic force microscope (AFM)
In the present study we have further focused on the ferroelectric (FE) properties of these BVBT bilayer thin films deposited on platinized silicon substrate
Summary
Physical properties or in many cases may give rise to new properties which were not exhibited by the starting materials. The Aurivillius family of layered bismuth oxides is a class of ferroelectrics whose properties have been widely studied [6]. Bismuth Vanadate [Bi2VO5.5 (BVO)] is a vanadium analog of the n = 1 member of the Aurivillius family which has a Curie temperature of 720 K [12,13,14]. It has been reported in the literature that the composite of BVO and BTO solid solution possesses better physical properties and low leakage current than that of BVO [15].
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