Abstract
This paper describes the structural and electronic characterization of lanthanum hafnium oxide thin films deposited by metal organic chemical vapor deposition using a novel precursor mixture. Structural characterization is obtained using x-ray diffraction and cross-sectional transmission electron microscopy and indicates that the as-deposited films and films annealed up to 900°C remain effectively amorphous. Capacitance voltage and current voltage measurements on metal-oxide-semiconductor capacitors made using the films as a gate dielectric show the films exhibit good electrical integrity following post deposition annealing at temperatures up to 950°C. A dielectric constant, k for the films of 20±1.5 is determined and a density of interface states (at midgap) Dit of 3.9×1011cm−2eV−1 was measured.
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