Abstract
Undoped polycrystalline AgInSe2 crystals were successfully grown at low temperature (650°C) using a hot-press method. The sizes of the samples were 2 cm in diameter. The largest grain size was approximately 90 nm. The presence of lattice defects such as Ag interstitials might lead to an enhancement in n-type electrical conductivity. The crystals had a resistivity of 2.2 Ω cm, a carrier concentration of 4.2 × 1016 cm3 and a mobility of 70 cm2V-1s-1 obtained by Hall measurement at RT.
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