Structural and electrical characteristics of ZrO2–TiO2 thin films by sol–gel method

Abstract

Abstract In this paper, we investigated electrical properties and microstructures of ZrTiO 4 (ZrO 2 –TiO 2 ) thin films prepared by the sol–gel method on ITO substrates at different annealing temperatures. All films exhibited ZrTiO 4 (1 1 1) and (1 0 1) orientations perpendicular to the substrate surface, and the grain size increased with increase in the annealing temperature. A low leakage current density of 2.06 × 10 −6 A/cm 2 was obtained for the prepared films. Considering the primary memory switching behavior of ZrTiO 4 , ReRAM based on ZrTiO 4 shows promise for future nonvolatile memory applications.