Abstract
The material Ba(Ti0.5Mn0.5)O3 synthesized through the conventional solid-state reaction method has hexagonal structure free from any impurity phase. The complex dielectric dispersion, temperature and frequency-dependent dielectric, impedance, AC conductivity, and leakage behavior of the sample are studied. The impedance study of the material encloses non-Debye type relaxation, negative temperature coefficient of resistance nature and the grain and grain boundary effects. The ferroelectric to paraelectric phase transition occurs at T C ∼ 270 °C. The dielectric constant and loss-tangent values are found to be less as compared to that of the parent barium titanate sample. R g < R gb, that is, grain boundary has greater opposition than the grain region. The material follows correlated barrier hopping model. The carrier transport process through AC conductivity study obeys the Jonscher’s power law and the Arrhenius relation while varying with the frequency and temperature.
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