Abstract
In this letter, we study the structural and electrical properties of high-k neodymium titanium oxide (NdTiO3) gate dielectrics deposited on Si (100) substrates by reactive rf sputtering. We find that the capacitance value of NdTiO3 gate dielectric prepared at a 6nm Ti metal film is higher than other thicknesses and exhibits a lower hysteresis voltage and interface trap density in capacitance-voltage curves. This result is attributed to an amorphous NdTiO3 structure and the suppression of the interfacial layer observed from x-ray diffraction and x-ray photoelectron spectroscopy, respectively.
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