Abstract
A comprehensive study on the synthesis and characterization of pure and manganese (Mn) doped gallium selenide (GaSe) has been reported in this paper. Synthesis of pure and manganese doped gallium selenide from component elements was carried out in transparent and fused quartz ampoules, with the help of a rocking furnace. X-ray diffractometry study revealed that the doping of manganese with gallium selenide does affect the morphology to a certain extent but not the crystal structure of gallium selenide (GaSe). It has been found that the preferential orientation of the crystalline grains are along the [001] direction. Respective values of crystallite size, strain and dislocation density have been calculated using powder X-ray diffraction results. The value of dielectric constant of doped specimen is higher at lower frequencies and decreases with increasing the frequency. The low value of dielectric loss suggests that the material possess enhanced optical quality with lesser defects.
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