Abstract

Perovskite type ceramics (Ba0.9Mg0.1)(SnxZr0.4-xTi0.6)O3 (with x = 0.01, 0.02, 0.03 and 0.04) relaxor composition prepared through solid state reaction route and calcinated at temperature is 1150°C for 5 hrs with intermediate mixing. The room temperature XRD study suggests that all the samples have the single phase cubic symmetry with space group pm 3 m. The pellets were sintered at 1500°C for 4 hrs. Scanning Electron Microscope (SEM) observations revealed enhanced micro structural uniformity and retarded grain growth with decreasing Sn content. The dielectric measurements at constant frequency show that dielectric constant increases with Sn content. Loss factor and dielectric constant decreased with increasing frequency but at very high frequencies it was independent.

Highlights

  • IntroductionBarium Titanate (BT) is the most common ferro electric material, which is used to manufacture electronic components such as multilayer capacitors, positive temperature coefficient thermistors, piezo electric transdures, and ferro electric memory, because of its excellent dielectric, piezo electric and ferro electric properties [1] [2]

  • Barium Titanate (BT) is the most common ferro electric material, which is used to manufacture electronic components such as multilayer capacitors, positive temperature coefficient thermistors, piezo electric transdures, and ferro electric memory, because of its excellent dielectric, piezo electric and ferro electric properties [1] [2].Pb(Zr,Ti)O3, PZT based ceramics has been study more than anyone else ferroelectric because of their excellent dielectric properties [3]

  • It is well known that homovalent and hetrovalent substitution for barium and titanium ions gives rise to various behaviors including the shifting of the transition temperature

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Summary

Introduction

Barium Titanate (BT) is the most common ferro electric material, which is used to manufacture electronic components such as multilayer capacitors, positive temperature coefficient thermistors, piezo electric transdures, and ferro electric memory, because of its excellent dielectric, piezo electric and ferro electric properties [1] [2]. Further increase in Zr content beyond 15%, a diffuse dielectric anomaly in ceramic has been observed with the decrease in transition temperature [28] and the material showed typical relaxor like behavior in the range 25% - 42% Zr substitution [29]. If we substitute the Sn in Zr+ ion site the Tc may be increased to room temperature and Sn4+ substituted BZT ceramic exhibits both high piezoelectric properties and good temperature stabilities in common usage temperature range. This inspired to work on effect of Sn on structural and dielectrical properties of (Ba0.9Mg0.1)(SnxZr0.4−xTi0.6)O3 relaxor composition prepared through solid state reaction route

Experimental
Structural Analysis
Microstructural Analysis
Dielectric Properties
Conclusion
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