Abstract
In this research paper, we have prepared thin film of MoS2 by thermal evaporation technique and characterized it. This thin film depositions lead to amorphous thin film. To make it crystalline, thermal annealing of the film have deposited on the substrates at 800 o C for two hour under vacuum environment. X-ray diffraction data of thin film shows the poly-crystalline nature. The Atomic Force Microscopy (AFM) image of the thin film shows the crystallinity with regularly arranged grains. Furthermore, an unconventional MoS2 based FET device has been fabricated by depositing thin film of MoS2 on p-type silicon. Thereafter, its transfer and output characteristics have been studied. The results show n-type semiconductor behaviour with an on/off ratio of about 103 and field-effect mobility of ~0.015 cm2/V. s at VDS of 1 V.
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