Abstract
In this work Cu2ZnSnS4 (CZTS) thin films were formed by rapid thermal annealing (RTA) of sequentially electrodeposited Cu–Zn and Sn films in 5% H2S containing atmosphere. Six different thermal profiles were used in the experiments. In three of these, the temperature ramping up was varied, while the variable in the other three profiles was the cooling down rate. The optimising parameters for RTA of electrodeposited films were found and annealed films were characterised by X-ray diffraction (XRD), micro-Raman spectroscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy (SEM+EDS). The material parameters such as lattice strain and crystallite size were also determined and the influence of annealing temperature and heating rate on these parameters was discussed.The pathway of MoS2 formation was investigated.
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