Abstract
Materials characterization of semiconductor structures suited for nonlinear optical applications has been performed by absorption and photomodulated absorption spectroscopy. With respect to non-modulated absorption spectroscopy, a strong increase in room temperature resolution is observed. We present here the first photomodulated absorption studies performed on Al<sub>x</sub>Ga<sub>1-x</sub>As/GaAs and In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs superlattices and AlAs/GaAs tunnel diodes, revealing excellent resolution of excitonic transitions. The temperature dependence of the spectral lineshapes arising from bulk InGaAs and AlGaAs samples is studied in the temperature range from 100K to 300K, and is compared to lineshapes arising from excitonic transitions in superlattices. Application of this technique to In<sub>x</sub>Ga<sub>1-x</sub>As/GaAs structures grown on GaAs substrates, which due to their favorable band structure do not require sample thinning, is most attractive.
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